Ferroelectric field effect transistors: Progress and perspective

Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices they can serve a synaptic device for neuromorphic implementation and one-transistor (1T) achieving high integration. Since the discovery of hafnium–zirconium oxide (HZO) with ferroelectricity (even at thickness several nanometers) that be fabricated by complementary metal–oxide–semiconductor-compatible process, FeFETs emerged great potential. In this article, basic principles FeFET design strategies state-of-the-art will discussed. using Pb(ZrxTi1?x)O3, polyvinylidene fluoride, HZO, two-dimensional materials are emphasized. FeFETs, ferroelectric semiconductor transistors, metal–ferroelectric–insulator–semiconductor structures to which those applied introduced, their exotic performances investigated. Finally, limitations these devices’ current performance potential presented.